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Shenzhen Selen Technology Co., Ltd

Consultation Hotline 19925361696 19925366196

Shenzhen Selen Technology Co., Ltd

Your Position:Home > Products Center > 金科JINKO > JK9610A field effect tube tester

  • JK9610A field effect tube tester

    Model:JK9610A

    Brand:金科JINKO

    Introduction:It can be used to test the main parameters of N-channel conduction power field effect tube with nominal current of about 2-85A and power of less than 300W.

  • Differences between 9610A and 9612:


    9610A can measure three parameters:

    A: Breakdown voltage VDSS Open voltage VGS Gfs transconductance
    B: The three parameters can only be measured one by one


    9612 can measure three parameters:

    A: The opening voltage VGS Gfs across the on-state resistance Ron inter-electrode capacitance Cir four parameters are measured together
    B: It's very efficient
    C: With sorting alarm suitable for mass incoming material inspection

    Power field effect tube tester /MOS tube tester /MOS tube sorting instrument /MOS tube pairing instrument Shenzhen JK9610A field effect tube tester Shanghai JK9610A field effect tube tester Changzhou JK9610A field effect tube tester JK9610A field effect tube tester price JK9610A field effect tube tester sales JK9610A field effect tube tester parameters JK9610A field effect tube tester quotation
    First, overview

    JK9610A power field effect tube tester, is a novel full digital disy type power field effect tube parameter test device, can be used for the nominal current of about 2-85A, power within 300W N channel pilot power field effect tube main parameters test. It can accurately measure breakdown voltage VDSS, gate opening voltage VGS (th) and amplification characteristic parameters transconductance Gfs. Especially, the test current of transconductance Gfs can reach 50A. Because the pulse current test method is used, it will not cause any damage to the measured device even in the high current test, and can also be used in the field effect under the high current state Should be responsible for parameter consistency testing (pairing); The instrument can be used to measure IGBT parameters with the same current grade. The instrument is also a very superior voltage test device of electronic components, the leakage current of the test voltage is 1mA,250uA,25uA three stops can be selected. The instrument is mainly used for quality test of power field effect tube and IGBT, parameter matching and voltage test of other electronic components. The instrument is divided into two kinds: N channel guide tester and P channel guide tester. The instrument is beautiful in appearance, stable in performance, accurate in measurement, simple in operation, safe and convenient in use

    Two, the main technical performance

    1, breakdown voltage VDSS measurement range: 0 -- 1999V, accuracy: ≤2.5percent

    2,IDSS can be divided into three choices: 1mA,250uA,25uA.

    3, grid opening voltage VGS (th) Measurement range: 0 -- 10V. Accuracy: ≤5percent

    4,Gfs transconductance test current Idm: not less than 1 -- 50 A continuous adjustable, accuracy: ≤10 percent

    5,Gfs transconductance test range: 1 -- 100

    Three, the main test function

    1. Breakdown voltage VDSS of power field effect tube, gate opening voltage VGS(th), transconductance Gfs test

    2,IGBT breakdown voltage V(BR)ces, gate opening voltage VGE(th), transconductance Gfs test.

    3, power field effect tube and IGBT in any current state below 50A consistency test, can be used for pairing

    4. Test of other larger current and power field effect tubes and IGBT: (see the following introduction).

    5, all kinds of crystal transistor, diode, voltage regulator breakdown voltage test.

    6, varistor voltage test, etc.

    Four, test box and test line

    1. The test box can be used TO test TO-126,TO-220,TOP-3 and other similar packaged power field effect tubes and IGBT.

    2, the use of test line can measure other metal class, module class and other packaging form of power field effect tube and IGBT.

    Test example

    Model number


    Breakdown voltage

    Vdss

    Turn on voltage

    Vgs(th)

    Transconductance S

    Gfs

    Test current Gfs

    Nominal current

    ID

    Nominal power

    PD

    Encapsulation

    IRF640

    Basic parameter

    200V

    2-4V

    ≥6.8

    11A

    18A

    150W

    TO-220

    Measured parameters

    225V

    3.0V

    12

    11A




    IRF1010

    Basic parameter

    60V

    2-4V

    ≥69

    50A

    84A

    200W

    TO-220

    Measured parameters

    66V

    3.2V

    67

    50A




    IRF3205

    Basic parameter

    55V

    2-4V

    ≥44

    62A

    110A

    200W

    TO-220

    Measured parameters

    60V

    2.9V

    68

    60A




    FQP70N08

    Basic parameter

    80V

    2-4V

    41

    35A

    70A

    155W

    TO-220

    Measured parameters

    86V

    3.2V

    46

    35A




    75NF75

    Basic parameter

    75V

    2-4V

    20

    40A

    80A

    300W

    TO-220

    Measured parameters

    81V

    3.6V

    52

    40A




    IRFP064

    Basic parameter

    55V

    2-4V

    ≥42

    59A

    110A

    200W

    TO-3P

    Measured parameters

    67V

    2.5V

    57

    60A




    2SK1120

    Basic parameter

    1000V

    2.5-5V

    4

    4A

    8A

    150W

    TO-3P

    Measured parameters

    1086V

    2.3V

    5

    4A




    G160N60

    Basic parameter

    600V

    3.5-6.5V

    *

    80A

    160A

    250W

    TO-247

    Measured parameters

    626V

    3.9V

    35

    60A




    H40T120

    Basic parameter

    1200V

    5-6.5V

    21

    40A

    75A

    270W

    TO-247

    Measured parameters

    1390V

    5.7V

    20

    40A




    60N170D

    Basic parameter

    1700V

    3.5-7.5V



    60A

    200W

    TO-247

    Measured parameters

    1798V

    4.8V

    30

    60A





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